Silicon is the industry standard for semiconductors. However, GaN has become a more beneficial option for RF applications.
gallium-nitride
A new technical paper titled “High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C” was published by researchers at MIT, Technology Innovation Institute, Ohio State University, Rice University and Bangladesh University of Engineering and Technology. Abstract “This Letter reports the stability of regrown and alloyed Ohmic contacts to AlGaN/GaN-on-Si... » read more
Understanding the unique advantages provided by silicon carbide (SiC) and gallium nitride (GaN) can help you select the optimal technology to meet your products’ power, thermal, and size requirements.
Learn about gallium-nitride (GaN) high electron mobility transistors (HEMTs) and how they can be used in LiDAR (light detection and ranging) applications.
Leveraging gallium nitride (GaN) technology, the latest batch of power devices boast improved performance, high efficiency, and low design costs.
It may be the only way to keep up with environmental power regulations
Target is 20kV, to protect electric grid from electromagnetic pulse