High Voltage, Low Competence
SiC vs GaN , HVDC, and the future of datacenter power.
gallium-nitride
The vertical GaN transistor: Time for take-off - Compound Semiconductor News
Our selection of industry specific magazines cover a large range of topics.
MIT spinoff Vertical Semiconductor gets $11M to build more power-efficient AI chips - SiliconANGLE
The power GaN race: market growth, consolidation, and new entrants
The expanding role of GaN in power electronics. Gallium nitride (GaN) has emerged as one of the most disruptive semiconductor technologies of the decade, with a market projected to reach $3 billion by 2030. Consumer applications, particularly fast chargers, have been the early…
Negative Capacitance Breaks GaN Transistor Limits
Researchers are testing a special coating on GaN devices that may enhance transistor performance by breaking the Schottky limit.
300mm GaN roadmap
Our selection of industry specific magazines cover a large range of topics.
Why RF Technologies Should Consider GaN Over Silicon - EE Times
Silicon is the industry standard for semiconductors. However, GaN has become a more beneficial option for RF applications.
Improving GaN Device Architectures
Novel combinations show promise for different applications.
GaN Devices: Properties and Performance At Extremely High Temperatures
A new technical paper titled “High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C” was published by researchers at MIT, Technology Innovation Institute, Ohio State University, Rice University and Bangladesh University of…
Choosing the Best Wide Bandgap Technology for Your Application - Industry Articles
Understanding the unique advantages provided by silicon carbide (SiC) and gallium nitride (GaN) can help you select the optimal technology to meet your products’ power, thermal, and size requirements.
GaN HEMT Circuit Topologies for High-resolution LiDAR
Learn about gallium-nitride (GaN) high electron mobility transistors (HEMTs) and how they can be used in LiDAR (light detection and ranging) applications.
Latest GaN ICs Crank out More Speed, Efficiency, and Power Density
Leveraging gallium nitride (GaN) technology, the latest batch of power devices boast improved performance, high efficiency, and low design costs.
Five key reasons to switch to GaN - DCD
It may be the only way to keep up with environmental power regulations
Sandia reports GaN diode with record 6.4kV breakdown ultrafast devices step
Target is 20kV, to protect electric grid from electromagnetic pulse