Yes, Transformers Are a Problem...
But So Are Converters, Inverters, and MMCs!
silicon-carbide
High Voltage, Low Competence
SiC vs GaN , HVDC, and the future of datacenter power.
ST remains largest silicon carbide power device maker, with 32.6% market sh
onsemi rises from fourth to second; top five players comprise 91.9% of revenue
US chipmaker Onsemi to invest $2bn in Czech Republic silicon carbide facili
Largest one-off direct foreign investment in the country
Infineon Makes First 300mm Power GaN Wafer With Existing Manufacturing Tools
The 300-mm gallium nitride (GaN) wafer production will bend the cost curve for power-dense, wide-bandgap devices, bringing them closer to cost parity with silicon.
Planned 8-inch silicon carbide wafer fabs worldwide reach 14
ST, Onsemi, Infineon, Wolfspeed, ROHM, BOSCH, Fuji Electric, Mitsubishi Electric, VIS/EPISIL, Silan, UNT and FT1 all plan SiC plants