semiconductor-memory

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2026-07-22 · etbe.coker.com.au

ECC and DDR5

Hamming Codes ECC RAM corrects errors that occur in memory before it gets to the CPU. The most common form of ECC is the Hamming Code [1] which when it has R redundant bits can correct single bit e…

2026-04-26 · wccftech.com

Samsung Breaks the 10nm DRAM Barrier With New 4F Cell Structure That Boosts Density By Up to 50%

Samsung has reportedly produced the world's first standalone DRAM module that uses a process tech below 10nm.

Note: The “1x, 1y, 1z, 1a…” naming is just the DRAM industry’s generational shorthand — each step is a shrink within the broad “10nm-class” umbrella, not a distinct architecture change. The progression: |Gen|Approx. node|Era | |---|------------|---------------------------| |1x |~18–19nm |~[2016–2017](tel:2016-2017)| |1y |~17nm |~2018 | |1z |~15–16nm |~[2019–2020](tel:2019-2020)| |1a |~14nm |~2021 | |1b…