chip-design

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2026-09-26 · arxiv.org

System-Technology Co-Evaluation of A7 CFET and A10 NSFET...

Complementary FETs (CFETs) extend nanosheet FET (NSFET) scaling by vertically stacking n- and p-type gate-all-around (GAA) devices, thereby shrinking standard-cell area. The performance gain, however, cannot be assessed from device metrics alone, as CFET layouts also introduce…

Note: Summary: This arXiv paper compares two next-generation chip technologies — A7 CFET and A10 NSFET — using a physics-based evaluation flow spanning from cell parasitics up to full-chip reliability. Approach: CFETs stack n- and p-type devices vertically to shrink cell area, but add extra cell-level resistance and capacitance. The authors built a flow linking calibrated device models, standard-cell…

2026-09-15 · spectrum.ieee.org

The AI Inference Revolution Is Here

Today’s tidal wave of queries is forcing hardware makers to pivot

Note: ### The AI Inference Revolution Is Here [IEEE Spectrum article](#rid:1854764141) — a survey of how the shift from AI training to AI **inference** is reshaping chip and memory design. **The shift** Since 2020, the AI story was about training ever-bigger models. In 2026 the spotlight has moved to inference — putting trained models to work. People actually use LLMs now, reasoning models run…

2026-04-26 · wccftech.com

Samsung Breaks the 10nm DRAM Barrier With New 4F Cell Structure That Boosts Density By Up to 50%

Samsung has reportedly produced the world's first standalone DRAM module that uses a process tech below 10nm.

Note: The “1x, 1y, 1z, 1a…” naming is just the DRAM industry’s generational shorthand — each step is a shrink within the broad “10nm-class” umbrella, not a distinct architecture change. The progression: |Gen|Approx. node|Era | |---|------------|---------------------------| |1x |~18–19nm |~[2016–2017](tel:2016-2017)| |1y |~17nm |~2018 | |1z |~15–16nm |~[2019–2020](tel:2019-2020)| |1a |~14nm |~2021 | |1b…